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PPD103B03 3BHE020455R0103模块卡件自动化PLC/DCS工控设备
133388-01 3500/53 超速检测模块
133396-01 超速检测I/O 模块
288062-01 3500/53M Overspeed Detection Module
323133-01 Overspeed Detection I/O Module
常用型号
3500/50-01-00-01(288062-02,133442-01)
3500/50-02-00-01
3500/50-03-00-01
产品详情资料:
PPD103B03 3BHE020455R0103
初始化大多数DRAM供应商要求在DRAM运行之前对DRAM进行数量的访问周期。MCECC不会自动执行此操作,而是依赖于软件对DRAM执行足够的虚拟访问以满足要求。所需循环数小于10。如果有多个DRAM块,软件对每个块执行至少10次访问。MCECC对提供快速零填充能力。下面所示的顺序执行这种零填充。当BCLK引脚工作在25MHz时,它以100MB/秒的速率将由该MCECC对控制的所有DRAM归零。如果擦除导致DRAM在全速下消耗过多功率,则可能更改此顺序以更慢地执行擦除。1.通过清除洗涤控制寄存器中的SCRBEN位,确保洗涤塔被禁用。(清除偏移$24的第27位。)2。通过等待清除擦洗控制寄存器中的SCRB位,确保擦洗器已完成任何旧的擦洗循环。(等待偏移$24的第28位=0。)
产品英文详情料:
Initialization Most DRAM vendors require that the DRAMs be subjected to some number of access cycles before the DRAMs are fully operational. The MCECC does not perform this automatically but depends on software to perform enough dummy accesses to DRAM to meet the requirement. The number of required cycles is less than 10. If there are multiple blocks of DRAM, software has to perform at least 10 accesses to each block. The MCECC pair provides a fast zero fill capability. The sequence shown below performs such a zero fill. It zeros all of the DRAM controlled by this MCECC pair at the rate of 100 MB/second when the BCLK pin is operating at 25 MHz. This sequence may have to be altered to perform the scrub more slowly if the scrub causes the DRAM to consume too much power at full speed. 1. Make sure that the scrubber is disabled by clearing the SCRBEN bit in the Scrub Control Register. (Clear bit 27 of offset $24.) 2. Make sure that the scrubber is done with any old scrub cycles by waiting for the SCRB bit in the Scrub Control Register to be cleared. (Wait for bit 28 of offset $24 = 0.)
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厦门阿米控技术有限公司整合了工业自动化领域的众多品牌
◆ Invensys Triconex
◆ Westinghouse(西屋)
◆ Rockwell Allen-Bradley (罗克韦尔)
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◆ ABB 飞利浦 爱默生
◆ 本特利3500系列监测系统卡/前置器/传感器
◆ Motorola(摩托罗拉)
◆ XYCOM
◆ GE FANUC(GE发那科)
◆ Yaskawa(安川)
◆ Bosch Rexroth(博世力士乐)
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